Nanoscale Research Letters

http://link.springer.com/journal/11671

List of Papers (Total 4,672)

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si1-x Ge x growth (0.35 ≤ × ≤ 0.40) with boron concentration of 1–3 × 1020 cm−3 was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality ...