Publisher Correction to: Effect of strain modification on crystallinity and luminescence of InGaN/GaN multiple quantum wells grown by MOCVD

Applied Physics A, Sep 2018

Shun Yao, Tian Lan, Guangzheng Zhou, Ying Li, Luguang Lang, Hongyan Yu, Zhaochen Lv, Zhiyong Wang

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Publisher Correction to: Effect of strain modification on crystallinity and luminescence of InGaN/GaN multiple quantum wells grown by MOCVD

Applied Physics A October 2018, 124:679 | Cite as Publisher Correction to: Effect of strain modification on crystallinity and luminescence of InGaN/GaN multiple quantum wells grown by MOCVD AuthorsAuthors and affiliations Shun YaoTian LanGuangzheng ZhouYing LiLuguang LangHongyan YuZhaochen LvZhiyong Wang Publisher Correction First Online: 11 September 2018 The original article can be found online at  https://doi.org/10.1007/s00339-018-1958-x. 1 Publisher Correction to: Applied Physics A (2018) 124:619  https://doi.org/10.1007/s00339-018-1958-x Dear readers, Unfortunately, the original version of this article did not correctly reflect the change of authorship. The corresponding author of this article is Prof. Zhiyong Wang, E-Mail: . Please excuse this mistake. The original article was corrected. Copyright information © Springer-Verlag GmbH Germany, part of Springer Nature 2018 Authors and Affiliations Shun Yao1View author's OrcID profileTian Lan1Guangzheng Zhou1Ying Li1Luguang Lang1Hongyan Yu1Zhaochen Lv1Zhiyong Wang1Email author1.Institute of Laser EngineeringBeijing University of TechnologyBeijingChina


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Shun Yao, Tian Lan, Guangzheng Zhou, Ying Li, Luguang Lang, Hongyan Yu, Zhaochen Lv, Zhiyong Wang. Publisher Correction to: Effect of strain modification on crystallinity and luminescence of InGaN/GaN multiple quantum wells grown by MOCVD, Applied Physics A, 2018, 679, DOI: 10.1007/s00339-018-2103-6