Erratum to: Series and parallel resistance effects on the C–V and G–V characteristics of Al/SiO \(_2\) /Si structure
Psychonomic Bulletin & Review ,
May 2017
Omar Rejaiba , Alejandro F. Braña , Adel Matoussi
A PDF file should load here. If you do not see its contents
the file may be temporarily unavailable at the journal website
or you do not have a PDF plug-in installed and enabled in your browser.
Alternatively, you can download the file locally and open with any standalone PDF reader:
https://link.springer.com/content/pdf/10.1007%2Fs10825-017-0970-2.pdf
Erratum to: Series and parallel resistance effects on the C–V and G–V characteristics of Al/SiO \(_2\) /Si structure
J Comput Electron
Erratum to: Series and parallel resistance effects on the C-V and G-V characteristics of Al/SiO2/Si structure
Omar Rejaiba 0 1
Alejandro F. Braña 0 1
Adel Matoussi 0 1
Alejandro F. Braña 0 1
0 Grupo de Electronica y Semiconductores, Departamento de Fısica Aplicada, Universidad Autonoma de Madrid , 28049 Madrid , Spain
1 Laboratory of Composite Ceramic and Polymer Materials (LaMaCoP), Sfax Faculty of Science , Soukra Road Km 4, Sfax 3038 , Tunisia
jωCsc+ Rp (...truncated)
https://link.springer.com/content/pdf/10.1007%2Fs10825-017-0970-2.pdf
Omar Rejaiba, Alejandro F. Braña, Adel Matoussi.
Erratum to: Series and parallel resistance effects on the C–V and G–V characteristics of Al/SiO \(_2\) /Si structure ,
Psychonomic Bulletin & Review,
2017, pp. 486-486, Volume 16, Issue 2, DOI: 10.1007/s10825-017-0970-2
