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Search: authors:"Andrii S. Nikolenko"

5 papers found.
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Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy

Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50...

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n+/n0/n+-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer...

Silicon Substrate Strained and Structured via Cavitation Effect for Photovoltaic and Biomedical Application

A hybrid structure, which integrates the nanostructured silicon with a bio-active silicate, is fabricated using the method of MHz sonication in the cryogenic environment. Optical, atomic force, and scanning electron microscopy techniques as well as energy dispersive X-ray spectroscopy were used for the investigation of the morphology and chemical compound of the structured...

Possibility of graphene growth by close space sublimation

Carbon films on the Si/SiO2 substrate are fabricated using modified method of close space sublimation at atmospheric pressure. The film properties have been characterized by micro-Raman and X-ray photoelectron spectroscopy and monochromatic ellipsometry methods. Ellipsometrical measurements demonstrated an increase of the silicon oxide film thickness in the course of...