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Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

The Bi content in GaAs/GaAs1 − xBi x /GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low magnification of high-angle annular dark-field scanning transmission electron microscopy images, corroborated by EDX analysis, revealed planar...

Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to solving energy problems

, Z. S. Szilagyi, Y. Peng, S. Travaglini, H. M. Christen, T. J. Pennycook, S. F. Findlay, A. J. DAlfonso, L. J. Allen, P. Werner, N. D. Zakharov, D. Kumar, K. Sohlberg, S. H. Overbury, T. Ben, D. L ... . Sales, J. Pizarro, P. L. Galindo, D. Fuster, Y. Gonzalez, L. Gonzalez, A. Rivera-Calzada, Z. Sefrioui, E. Iborra, W. H. Sides and J. T. Luck, which was supported by the Office of Basic Energy Sciences