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Search: authors:"N. Baladés"

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Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

The Bi content in GaAs/GaAs1 − xBi x /GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low magnification of high-angle annular dark-field scanning transmission electron microscopy images, corroborated by EDX analysis, revealed planar...