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Search: authors:"Oleksandr I. Datsenko"

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Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

Photoelectric properties of the metamorphic InAs/In x Ga1 − xAs quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiometry of In x Ga1 − xAs cladding layer have been grown: indium content x was 0.15, 0.24, 0.28...