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Search: authors:"Sanjie Liu"

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PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing the perfectly smooth interface between the AlN film ...