Journal of Electronic Materials

http://link.springer.com/journal/11664

List of Papers (Total 352)

Enhanced Numerical Modeling of HgCdTe Long Wavelength Infrared Radiation High Operating Temperature Non-equilibrium P+ν(π)N+ Photodiodes

Using our computer programs, numerical simulations of photoelectric and fluctuating phenomena were carried out in diode structures of the CdHgTe mesa in the P+ν(π)N+ configuration operating at 230 K and 300 K. These phenomena were analyzed in structures where additional energy barriers at the absorber boundary were applied. Exclusion and extraction of charge carriers in the...

Electromagnetic Shielding and Reflection Loss of Conductive Yarn Incorporated Woven Fabrics at the S and X Radar Bands

This study provides comparison of different types of conductive yarns stitched on top of the plain woven fabric via two different structures (parallel and mesh form) for electromagnetic shielding applications. Different types of structures with conductive yarns were investigated for electromagnetic shielding and reflection loss features within the S and X Radar bands. Conductive...

Impedance Spectroscopy of Vanadium Pentoxide Thin Films

V2O5 thin films have been deposited onto an insulating support by radiofrequency (rf) reactive sputtering from a metallic vanadium target at controlled flow rates of argon–oxygen gas mixture. Glancing-incidence x-ray diffraction (GIXD) analysis and scanning electron microscopy (SEM) were used for structural and phase characterization of the obtained materials. The as-sputtered...

The Properties of Bi2Te3-Cu Joints Obtained by SPS/FAST Method

One of the most important challenges connected with the production of thermoelectric modules and their parts is the development of an appropriate joining technology. The produced junctions must be characterised not only by high mechanical strength and good adhesion but also by high electrical conductivity, high heat conductivity and, due to working conditions, by a long-term...

A High-Efficiency 220 GHz Doubler Based on the Planar Schottky Varactor Diode

In this paper, we present the design, analysis and measurement of a 220 GHz doubler, based on a planar Schottky varactor diode. The 3D model of the varactor diodes were firstly established in a high-frequency structure simulator, then the parasitic parameters were extracted and imported into advanced design system, in order to optimize the whole circuit. The experiment on the...

Applications of Microwave Materials: A Review

The performance of microwave devices mainly depends on the properties of materials used in the fabrication. Knowledge of material properties at microwave frequencies is a prerequisite to select suitable materials for various microwave applications and vice versa. In this review, seven categories of materials and their applications in a microwave regime are elaborately discussed...

Surface Disorder Engineering of Flake-Like Bi2WO6 Crystals for Enhanced Photocatalytic Activity

The NaBH4 reduction method has been used to engineer the surface of flake-like Bi2WO6 (BWO) crystals with the aim of creating disordered surface structure and enhancing the photocatalytic activity. The disorder-engineered BWO samples were investigated by means of x-ray powder diffraction, field-emission scanning electron microscopy, field-emission transmission electron microscopy...

Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide

Previous studies showed that cobalt silicide can form ohmic contacts to p-type 6H-SiC by directly reacting cobalt with 6H-SiC. Similar results can be achieved on 4H-SiC, given the similarities between the different silicon carbide polytypes. However, previous studies using multilayer deposition of silicon/cobalt on 4H-SiC gave ohmic contacts to n-type. In this study, we...

Impact of Rotation Rate on Bismuth Saturation in GaAsBi Grown by Molecular Beam Epitaxy

GaAs1−xBix has been grown by solid-source molecular beam epitaxy using varying substrate rotation rates. Changes in local bismuth saturation were studied by varying the Bi/Ga pressure ratio across the wafer. Films were grown on both GaAs and InGaAs buffer layers with varying indium content to change the strain conditions of the bismide layer and the out-of-plane growth rate. All...

Solution-Processed Insulators for Flexible Metal-Insulator-Metal Structures

Repeatable switching hysterisis in metal-insulator-metal devices is commonly attributed to the motion of oxygen vacancies under a sufficiently large external electric field. The resulting memristive behaviour has become a compelling alternative to traditional non-volatile memory device architectures. A room-temperature process for the fabrication of a metal-insulator-metal...

Improvement of Mn1.56(Co1−xAlx)0.96Ni0.48O4 (0.1 ≤ x ≤ 0.4) Film Preparation and Assessment of Its Structure and Properties

A series of Mn1.56(Co1−xAlx)0.96Ni0.48O4 (x = 0.1, 0.2, 0.3, and 0.4) films were prepared by the chemical solution deposition method and then post-heated at 150°C for 300 h. Scanning electron microscopy and x-ray diffraction revealed remarkable improvements in relative density and crystallinity in post-heated Mn1.56(Co1−xAlx)0.96Ni0.48O4 (x = 0.1, 0.2, 0.3, and 0.4) films. From x...

Detailed Transient Multiphysics Model for Fast and Accurate Design, Simulation and Optimization of a Thermoelectric Generator (TEG) or Thermal Energy Harvesting Device

Described herein is a detailed and comprehensive multiphysics model of a thermoelectric generator (TEG). The one-dimensional model uses electrical–thermal analogies solved for transient response using SPICE. There are many advantages and applications of thermoelectric generators. Wider use and application advancements are generally limited by the tools available for engineering...

Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes

Energetically deposited graphitic carbon (C) is known to form high-endurance rectifying contacts to a variety of semiconductors. Graphitic contacts to n-type 6H-SiC have demonstrated current rectification ratios (at ± 1.5 V) up to 1:106. In this article, the current voltage temperature (I–V–T) characteristics of these devices are examined to reveal more detail on the junction...

Influence of Zn Concentration on Interfacial Intermetallics During Liquid and Solid State Reaction of Hypo and Hypereutectic Sn-Zn Solder Alloys

In this study, Sn-Zn solder samples containing 2 to 12 wt.% Zn were fabricated and reflowed into a Cu substrate. The microstructure of solder samples was observed after reflow and aging for up to 1000 h at 150°C. Thermodynamically stable intermetallics (IMCs) Cu-Zn and Cu-Sn formed at the interface depending on the solder composition. Formation of different interfacial IMCs...

Conjugate Electrospinning Construction of Microyarns with Synchronous Color-Tuned Photoluminescence and Tunable Electrical Conductivity

Here, we report a strategy for constructing {[Tb(BA)3phen + Eu(BA)3phen]/PAN}//[PANI/PAN] (BA = benzoic acid, phen = phenanthroline, PANI = polyaniline, PAN = polyacrylonitrile) hetero-structured microyarns simultaneously endowed with the bi-functionality of tunable luminescence colors and electrical conductivity by using a conjugate electrospinning technique. The obtained hetero...

Doping Optimization for the Power Factor of Bipolar Thermoelectric Materials

Bipolar carrier transport is often a limiting factor in the thermoelectric efficiency of narrow bandgap materials at high temperatures due to the reduction in the Seebeck coefficient and the introduction of an additional term to the thermal conductivity. Using the Boltzmann transport formalism and a two-band model, we simulate transport through bipolar systems and calculate their...

Energy Transfer Behavior and Color-Tunable Properties of Ca2Al2SiO7:RE3+ (RE3+ = Tm3+, Dy3+, Tm3+/Dy3+) for White-Emitting Phosphors

Tm3+/Dy3+-codoped Ca2Al2SiO7 phosphors have been synthesized using a high-temperature solid-state reaction method. The crystal structure, x-ray diffraction patterns, and photoluminescence (PL) properties of the rare-earth (RE) ions, and energy transfer (ET) processes between RE ions, were investigated in detail. The quenching concentration of Tm3+ and Dy3+ singly doped in...

Probing Spintronic Features in Conduction through Silicene and Graphene Barriers

The Dirac electrons in silicene experience stronger spin-orbit interaction (SOI) than in graphene due to silicene's band buckled two-dimensional (2D) structure. In this work we theoretically probe the main effects of the SOI in silicene, provided this interaction can be controlled by an external electrical field. Attention is paid to how silicene's SOI effects can turn into...

Porous Carbon Nanosheets Prepared from Plastic Wastes for Supercapacitors

With the rise of living standards, non-biodegradable waste, especially waste plastics, has caused serious environmental problems. Herein, we prepare nitrogen doped porous carbon nanosheets (N-PCNs) using magnesium hydroxide [Mg(OH)2] sheets, which are modified by Zn and Co bimetallic zeolitic imidazolate framework nanoparticles as templates and polystyrene (PS) as a carbon...

The Effect of U Atom Adsorption on the Structural, Electronic and Magnetic Properties of Single-Walled Carbon Nanotubes

We investigate the structural, electronic and magnetic properties of three types of single-walled carbon nanotubes (SWNTs, zigzag, armchair and chiral) with adsorption of a uranium (U) atom using density-functional theories. Structural analysis shows that the site on the top of the hexagonal ring is the most stable for the U atom adsorption on all the three types of SWNTs. Upon...

Transition of p- to n-Type Conductivity in Mechanically Activated Bismuth Telluride

Bismuth telluride (Bi2Te3) exhibits a transition from p- to n-type conduction as a result of high-energy ball milling. The transition is monitored over mechanical activation through measurement of the thermoelectric properties in the temperature range of 1.9 K to 390 K. Data show a flip in polarity of the Seebeck coefficient from 225 μV K−1 for the bulk sample to − 120 μV K−1 (at...