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Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection

Active and Passive Elec. Comp., December 0882-7516 MODELING OF THE I-V CHARACTERISTICS FOR LDD-nMOSFETs IN RELATION WITH DEFECTS INDUCED BY HOT-CARRIER INJECTION R. MARRAKH 0 A. BOUHDADA 0 0

Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics

International Journal of IMPACT OF THE STRESS ON THE SUB-MICRON N-METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR CHARACTERISTICS R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des ... . Bouhdada , S. Bakkali and A . Touhami ( 1997 ) Microelectronics and Reliability Journal 37 , 649 - 652 . [4] A. Bouhdada , S. Bakkali , A. Nouagry and A . Touhami ( 1997 ) Microelectronics Journal 28 , 85

Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics

International Journal of IMPACT OF THE STRESS ON THE SUB-MICRON N-METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR CHARACTERISTICS R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des ... . Bouhdada , S. Bakkali and A . Touhami ( 1997 ) Microelectronics and Reliability Journal 37 , 649 - 652 . [4] A. Bouhdada , S. Bakkali , A. Nouagry and A . Touhami ( 1997 ) Microelectronics Journal 28 , 85

Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection

Active and Passive Elec. Comp., December 0882-7516 MODELING OF THE I-V CHARACTERISTICS FOR LDD-nMOSFETs IN RELATION WITH DEFECTS INDUCED BY HOT-CARRIER INJECTION R. MARRAKH 0 A. BOUHDADA 0 0

Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics

International Journal of IMPACT OF THE STRESS ON THE SUB-MICRON N-METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR CHARACTERISTICS R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des ... . Bouhdada , S. Bakkali and A . Touhami ( 1997 ) Microelectronics and Reliability Journal 37 , 649 - 652 . [4] A. Bouhdada , S. Bakkali , A. Nouagry and A . Touhami ( 1997 ) Microelectronics Journal 28 , 85

Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET's with Localized Defects

International Journal of MODELING OF SURFACE POTENTIAL AND THRESHOLD VOLTAGE OF LDD nMOSFET'S WITH LOCALIZED DEFECTS A. BOUHDADA 0 R. MARRAKH 0 0 Laboratoire de Physique des Matbriaux et de

Modeling of Interface Defect Distribution for an n-MOSFETs Under Hot-Carrier Stressing

International Journal of MODELING OF INTERFACE DEFECT DISTRIBUTION FOR AN n-MOSFETs UNDER HOT-CARRIER STRESSING R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des Matbriaux et de

Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection

Active and Passive Elec. Comp., December 0882-7516 MODELING OF THE I-V CHARACTERISTICS FOR LDD-nMOSFETs IN RELATION WITH DEFECTS INDUCED BY HOT-CARRIER INJECTION R. MARRAKH 0 A. BOUHDADA 0 0

Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics

International Journal of IMPACT OF THE STRESS ON THE SUB-MICRON N-METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR CHARACTERISTICS R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des ... . Bouhdada , S. Bakkali and A . Touhami ( 1997 ) Microelectronics and Reliability Journal 37 , 649 - 652 . [4] A. Bouhdada , S. Bakkali , A. Nouagry and A . Touhami ( 1997 ) Microelectronics Journal 28 , 85

Modeling of Interface Defect Distribution for an n-MOSFETs Under Hot-Carrier Stressing

International Journal of MODELING OF INTERFACE DEFECT DISTRIBUTION FOR AN n-MOSFETs UNDER HOT-CARRIER STRESSING R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des Matbriaux et de

Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET's with Localized Defects

International Journal of MODELING OF SURFACE POTENTIAL AND THRESHOLD VOLTAGE OF LDD nMOSFET'S WITH LOCALIZED DEFECTS A. BOUHDADA 0 R. MARRAKH 0 0 Laboratoire de Physique des Matbriaux et de