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Search: authors:"Genquan Han"

9 papers found.
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Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances

We demonstrate the negative capacitance (NC) effect of HfZrOx-based field-effect transistors (FETs) in the experiments. Improved IDS, SS, and Gm of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET. In this experiment, the bottom MIS transistors with different passivation time are equivalent to the NC devices with different MOS capacitances...

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2

Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−xZrxO2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of subthreshold swing (SS), which is induced by the NC effect. Drive current IDS increases with the increase of annealing temperature...

Ge pMOSFETs with GeOx Passivation Formed by Ozone and Plasma Post Oxidation

A comparison study on electrical performance of Ge pMOSFETs with a GeOx passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al2O3/n-Ge (001) substrate followed by a 5-nm HfO2 gate dielectric in situ deposited in an ALD chamber. The quality of the dielectric/Ge interface layer was characterized by...

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. The ferroelectric nature of the NEI layers comprising orthorhombic ZrO2 nanocrystals embedded in amorphous Al2O3 is proved...

High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation

We report the amorphous Si passivation of Ge pMOSFETs fabricated on (001)-, (011)-, and (111)-orientated surfaces for advanced CMOS and thin film transistor applications. Amorphous Si passivation of Ge is carried out by magnetron sputtering at room temperature. With the fixed thickness of Si tSi, (001)-oriented Ge pMOSFETs achieve the higher on-state current ION and effective...

Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment

We investigate the metal-insulator-semiconductor contacts on n-Ge utilizing a ZnO interfacial layer (IL) to overcome the Fermi-level pinning (FLP) effect at metal/Ge interface and reduce the barrier height for electrons. A small conduction band offset of 0.22 eV at the interface between ZnO and n-Ge is obtained, and the ZnO IL leads to the significant reduced contact resistance...

Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress

Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6 passivation of Ge was utilized...

Stable Inverted Low-Bandgap Polymer Solar Cells with Aqueous Solution Processed Low-Temperature ZnO Buffer Layers

Efficient inverted low-bandgap polymer solar cells with an aqueous solution processed low-temperature ZnO buffer layer have been investigated. The low-bandgap material PTB-7 is employed so that more solar light can be efficiently harvested, and the aqueous solution processed ZnO electron transport buffer layer is prepared at 150°C so that it can be compatible with the roll-to...

Stable Inverted Low-Bandgap Polymer Solar Cells with Aqueous Solution Processed Low-Temperature ZnO Buffer Layers

Efficient inverted low-bandgap polymer solar cells with an aqueous solution processed low-temperature ZnO buffer layer have been investigated. The low-bandgap material PTB-7 is employed so that more solar light can be efficiently harvested, and the aqueous solution processed ZnO electron transport buffer layer is prepared at 150°C so that it can be compatible with the roll-to...