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Search: authors:"Jiebin Niu"

3 papers found.
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Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress

Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6 passivation of Ge was utilized...

Chemical ordering suppresses large-scale electronic phase separation in doped manganites

, Jiebin Niu, Wengang Wei, Hao Liu, Hanxuan Lin, Kai Zhang, Yunfang Kou, Jian Shao, Lifeng Yin & Jian ShenInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100080, ChinaJiebin NiuDepartment ... ScholarSearch for Jiebin Niu in:Nature Research journals • PubMed • Google ScholarSearch for Lingfang Lin in:Nature Research journals • PubMed • Google ScholarSearch for Wengang Wei in:Nature Research journals

Compound semiconductor nanotube materials grown and fabricated

A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam...