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Localised states and their capture characteristics in amorphous phase-change materials

As phase-change materials are poised to play a key role in next-generation computing systems, improving the current understanding of electrical transport in their amorphous phase can further strengthen their technological competitiveness. Even though the interaction of charge carriers with disorder-induced localised states largely affect the field-dependent conductivity, a clear...

Relation between bandgap and resistance drift in amorphous phase change materials

, 8803 Rüschlikon, SwitzerlandMartin Rütten AuthorsSearch for Martin Rütten in:Nature Research journals • PubMed • Google ScholarSearch for Matthias Kaes in:Nature Research journals • PubMed • Google