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Search: authors:"Mei-Na Zhang"

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High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) are compared by using O2 plasma-enhanced atomic layer deposition Al2O3 dielectrics at different temperatures. High-performance a-IGZO TFTs are demonstrated successfully with an Al2O3 dielectric deposited at room temperature, which exhibit a high field-effect mobility of 19.5 cm2 V− 1 s− 1, a...