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Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection

Active and Passive Elec. Comp., December 0882-7516 MODELING OF THE I-V CHARACTERISTICS FOR LDD-nMOSFETs IN RELATION WITH DEFECTS INDUCED BY HOT-CARRIER INJECTION R. MARRAKH 0 A. BOUHDADA 0 0

Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics

International Journal of IMPACT OF THE STRESS ON THE SUB-MICRON N-METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR CHARACTERISTICS R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des ... - 91 . [5] A. Bouhdada , A . Noua;ry, S. Bakkali , A. Touhami and R. Marrakh ( 1999 ) Microelectronics Journal 30 , 19 - 22 . [6] H. H. Li , Y. L. Chu and C. Y. Wu ( 1997 ) IEEE Trans . Electron. Devices

Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics

International Journal of IMPACT OF THE STRESS ON THE SUB-MICRON N-METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR CHARACTERISTICS R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des ... - 91 . [5] A. Bouhdada , A . Noua;ry, S. Bakkali , A. Touhami and R. Marrakh ( 1999 ) Microelectronics Journal 30 , 19 - 22 . [6] H. H. Li , Y. L. Chu and C. Y. Wu ( 1997 ) IEEE Trans . Electron. Devices

Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection

Active and Passive Elec. Comp., December 0882-7516 MODELING OF THE I-V CHARACTERISTICS FOR LDD-nMOSFETs IN RELATION WITH DEFECTS INDUCED BY HOT-CARRIER INJECTION R. MARRAKH 0 A. BOUHDADA 0 0

Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics

International Journal of IMPACT OF THE STRESS ON THE SUB-MICRON N-METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR CHARACTERISTICS R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des ... - 91 . [5] A. Bouhdada , A . Noua;ry, S. Bakkali , A. Touhami and R. Marrakh ( 1999 ) Microelectronics Journal 30 , 19 - 22 . [6] H. H. Li , Y. L. Chu and C. Y. Wu ( 1997 ) IEEE Trans . Electron. Devices

Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET's with Localized Defects

International Journal of MODELING OF SURFACE POTENTIAL AND THRESHOLD VOLTAGE OF LDD nMOSFET'S WITH LOCALIZED DEFECTS A. BOUHDADA 0 R. MARRAKH 0 0 Laboratoire de Physique des Matbriaux et de

Modeling of Interface Defect Distribution for an n-MOSFETs Under Hot-Carrier Stressing

International Journal of MODELING OF INTERFACE DEFECT DISTRIBUTION FOR AN n-MOSFETs UNDER HOT-CARRIER STRESSING R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des Matbriaux et de

Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection

Active and Passive Elec. Comp., December 0882-7516 MODELING OF THE I-V CHARACTERISTICS FOR LDD-nMOSFETs IN RELATION WITH DEFECTS INDUCED BY HOT-CARRIER INJECTION R. MARRAKH 0 A. BOUHDADA 0 0

Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics

International Journal of IMPACT OF THE STRESS ON THE SUB-MICRON N-METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR CHARACTERISTICS R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des ... - 91 . [5] A. Bouhdada , A . Noua;ry, S. Bakkali , A. Touhami and R. Marrakh ( 1999 ) Microelectronics Journal 30 , 19 - 22 . [6] H. H. Li , Y. L. Chu and C. Y. Wu ( 1997 ) IEEE Trans . Electron. Devices

Modeling of Interface Defect Distribution for an n-MOSFETs Under Hot-Carrier Stressing

International Journal of MODELING OF INTERFACE DEFECT DISTRIBUTION FOR AN n-MOSFETs UNDER HOT-CARRIER STRESSING R. MARRAKH 0 A. BOUHDADA 0 0 Laboratoire de Physique des Matbriaux et de

Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET's with Localized Defects

International Journal of MODELING OF SURFACE POTENTIAL AND THRESHOLD VOLTAGE OF LDD nMOSFET'S WITH LOCALIZED DEFECTS A. BOUHDADA 0 R. MARRAKH 0 0 Laboratoire de Physique des Matbriaux et de