Ballistic n-type carbon nanotube (CNT)-based field-effect transistors (FETs) have been fabricated by contacting semiconducting single-walled CNTs (SWCNTs) using Sc or Y. The n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and insulator. The CNT FETs outperformed n-type Si metal-oxide-semiconductor (MOS) FETs with the same...
Semiconducting carbon nanotubes (CNTs) possess outstanding electrical and optical properties because of their special one-dimensional (1D) structure. CNTs are direct bandgap materials, which makes them ideal for use in optoelectronic devices, e.g. light emitters and light detectors. Excitons determine their light absorption and light emission processes due to the strong Coulomb...
