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Search: authors:"Xi-Chun Zhang"

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Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a...

Exact Symbol Error Probability of Cross-QAM in AWGN and Fading Channels

The exact symbol error probability (SEP) performance of -ary cross quadrature amplitude modulation (QAM) in additive white Gaussian noise (AWGN) channel and fading channels, including Rayleigh, Nakagami-m, Rice, and Nakagami-q (Hoyt) channels, is analyzed. The obtained closed-form SEP expressions contain a finite (in proportion to ) sum of single integrals with finite limits and...