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Search: authors:"Yuta Sannomiya"

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Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

SiOxNy films with a low nitrogen concentration (< 4%) have been prepared on Si substrates at 400°C by atmospheric-pressure plasma oxidation-nitridation process using O2 and N2 as gaseous precursors diluted in He. Interface properties of SiOxNy films have been investigated by analyzing high-frequency and quasistatic capacitance-voltage characteristics of metal-oxide-semiconductor...