Nature Electronics

Launched in January 2018, Nature Electronics is an online-only monthly journal publishing the best research from all areas of electronics, incorporating the work of scientists, engineers and researchers in industry. All editorial decisions are made by a team of full-time professional editors.

List of Papers (Total 271)

Non-volatile memories based on patterned metal–semiconductor heterostructures of niobium disulfide and molybdenum disulfide

The performance of transistors based on two-dimensional transition metal dichalcogenide semiconductors is restricted by the poor interface quality between two-dimensional materials and conventional three-dimensional contacts. Transition-metal-dichalcogenide-based metal–semiconductor heterostructures have been developed to enhance device performance, but finding fabrication...

Zeptojoule calorimetry

The measurement of energy is a fundamental tool used in quantum technology and computing. Some of the most sensitive energy detectors—bolometers and calorimeters—are thermal, meaning that they operate by absorbing incoming energy, converting it into heat and reading out the resulting temperature change electrically using a thermometer. Recently, superconductor–normal-conductor...

An implantable epiretinal device for near-infrared light perception

Human vision relies on photoreceptor cells in the outer retina that are sensitive to visible light. However, many people suffer from blindness due to retinal diseases that cause photoreceptor degeneration. Electrical stimulation of retinal neurons can recreate the action potentials associated with seeing that are generated by these cells. Here we report a thin artificial retina...

Low-temperature wafer-scale growth of ultrathin tungsten disulfide for bifunctional interconnect barriers and liners

In the future, the miniaturization of integrated circuits will require copper wires to be scaled down in the back-end-of-line (BEOL) process. This will, in turn, require a scaling down of the barrier and liner coatings that prevent copper diffusion and ensure metal adhesion to the dielectric. Here we show that thin (<1 nm) and conformal tungsten disulfide (WS2) layers can be...

Radiofrequency cascade readout of coupled spin qubits

Silicon spin qubits based on metal–oxide–semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, spin readout typically relies on proximal charge sensors, which add architectural complexity and limit qubit connectivity. In situ dispersive readout techniques are more compact, which can alleviate...

A crossbar chip for benchmarking semiconductor spin qubits

The large-scale integration of semiconductor spin qubits into quantum processors will require the characterization of quantum components at scale. However, such characterization is challenging and typically requires radio-frequency measurements at millikelvin temperatures and the presence of magnetic fields. Here we report a scalable architecture for characterizing spin qubits...

Fully autonomous tuning of a spin qubit

The development of large-scale semiconductor quantum circuits is limited by the difficulties involved in efficiently tuning and operating such circuits. Identifying optimal operating conditions for these qubits is, in particular, complex and involves the exploration of vast parameter spaces. Here we report the autonomous tuning of a semiconductor qubit, from a grounded device to...

Robot reasons

Metallic charge transport in conjugated molecular bilayers

Metallic charge transport of field-induced carriers can be observed in single-crystal silicon over a wide temperature range. Such behaviour is rare in undoped organic semiconductors but is beneficial for engineering devices with advanced performance. Here we report metallic charge transport in conjugated molecular bilayers down to 8 K with an electrical conductivity of up to 245...

Single-crystalline monolayer semiconductors with coherent quantum transport by vicinal van der Waals epitaxy

Monolayers of transition metal dichalcogenides, such as molybdenum disulfide, are a potential platform for two-dimensional carrier transport. However, although single-crystalline monolayer channels have been grown at the wafer scale using unidirectional coalescence epitaxy, achieving coherent two-dimensional transport at similar scales remains challenging. This is mainly due to...

A subnanolitre tetherless optoelectronic microsystem for chronic neural recording in awake mice

The long-term recording of neural activity could be used to understand complex behaviours and disorders. However, the development of technology capable of such measurements faces a variety of technical challenges, including the relative motion between recording electrodes and tissue and the excessive displaced volume from implanted electronics. Here we report a subnanolitre...

Three-dimensional integrated hybrid complementary circuits for large-area electronics

The development of low-power computing sectors requires compact, power-efficient and high-performance integrated circuits. Hybrid technology that combines n-type metal oxide thin-film transistors and p-type organic thin-film transistors offers a potential solution. However, increasing the transistor density of these systems through vertical stacking is challenging due to issues...

Precise and scalable analogue matrix equation solving using resistive random-access memory chips

Precision has long been the central bottleneck of analogue computing. Bit-slicing or analogue compensation can be used to perform matrix–vector multiplication with precision, but solving matrix equations using such techniques is challenging. Here we describe a precise and scalable analogue matrix inversion solver. Our approach uses an iterative algorithm that combines analogue...