Correction to: Room temperature ammonia gas sensor using Nd-doped SnO2 thin films and its characterization
Journal of Materials Science: Materials in Electronics (2020) 31:14000–14001
https://doi.org/10.1007/s10854-020-03992-6
CORRECTION
Correction to: Room temperature ammonia gas sensor using
Nd‑doped SnO2 thin films and its characterization
S. Maheswari1,2 · M. Karunakaran2 · L. Bruno Chandrasekar3
Published online: 21 July 2020
© Springer Science+Business Media, LLC, part of Springer Nature 2020
Correction to:
Journal of Materials Science: Materials in Electronics
https://doi.org/10.1007/s10854-020-03809-6
The original version of the article (https://doi.org/10.1007/
s10854-020-03809-6) was unfortunately published with
errors in Table 2 and Fig. 9a. These errors are corrected in
this article. The corrected table and figure are given below.
The original article can be found online at https://doi.org/10.1007/
s10854-020-03809-6.
* L. Bruno Chandrasekar
1
Department of Physics, Caussanel College of Arts
and Science, Muthupettai, India
2
Thin Film and Nano Science Research Lab, Department
of Physics, Alagappa Government Arts College,
Karaikudi 630 003, India
3
Department of Physics, Periyar Maniammai Institute
of Science & Technology, Vallam, India
4
Department of Physics, The American College, Madurai,
India
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· K. Kasirajan2 · N. Rajkumar4
Journal of Materials Science: Materials in Electronics (2020) 31:14000–14001
Table 2 Structural properties
14001
Nd concentration
(%)
Film
thickness
(nm)
Grain
size
(nm)
Dislocation density × 1015 (lines/
m 2)
Strain
0
1
3
5
320
343
384
410
16
19
25
33
3.91
2.77
1.60
0.91
9.30 × 10–3
8.20 × 10–3
8.27 × 10–3
8.27 × 10–3
Lattice constants Cell volume (Å3)
a (Å)
c (Å)
4.6394
4.7004
4.7197
4.7197
3.1561
3.3467
3.3680
3.5752
67.93
73.94
75.02
79.64
Fig. 9 a Response time (Tres)
and recovery time (Trec) of
SnO2:Nd thin films (NH3 gas of
25 ppm concentration)
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