Erratum to: Growth Behavior of Cubic Boron Nitride (cBN) Phase in B-C-N Film Deposited on Si Substrate with Non-Uniform Ion Flux

Met. Mater. Int., doi: 10.1007/s12540-013-3036-4 ERRATUM Erratum to: Growth Behavior of Cubic Boron Nitride (cBN) Phase in B-C-N Film Deposited on Si Substrate with Non-Uniform Ion Flux Seung-Min Lee, Tae-Yeon Seong, Wook-Seong Lee, Young-Joon Baik, and Jong-Keuk Park Erratum to: Met. Mater. Int., Vol. 19, No. 3, pp. 591-595 (2013) doi: 10.1007/s12540-013-3031-9 On page 591, first paragraph, 3rd to 10th line, the following sentence should be now read as: In contrast to the diamond thin film with sp3-bonding which has been deposited by chemical vapor deposition (CVD) with a mixed gas of carbon source and hydrogen at a high temperature over 800 °C, the cBN phase has been mainly synthesized by physical vapor deposition (PVD) with an energetic ion source at a lower temperature below 600 °C, as in the case of transition metal (carbo) nitride coatings [14]. The online version of the original article can be found at http://dx.doi.org/ doi: 10.1007/s12540-013-3031-9 ©KIM and Springer  (...truncated)